C.W. oscillation with p+-p-n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands

Access Full Text

C.W. oscillation with p+-p-n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Submillimetre-wave silicon single-drift-region IMPATT diodes with a p+−p−n+ structure have been fabricated by ion implantation. C.W. output powers of 7.5 mW at 285 GHz and 78 mW at 185 GHz were obtained. The maximum c.w. oscillation frequency observed was 394 GHz.

Inspec keywords: solid-state microwave devices; IMPATT diodes; semiconductor device manufacture; ion implantation

Other keywords: ion implantation; CW oscillation; p+-p-n+ Si IMPATT diodes; 200 GHz; 300 GHz; submillimetre wave Si single drift region IMPATT diodes; CW output powers

Subjects: Semiconductor doping; Junction and barrier diodes; Semiconductor industry

References

    1. 1)
      • Ohmori, M., Ishibashi, T., Makimura, T., Ono, S.: `Design of Si IMPATT diodes for high-frequency operation', Paper at Technical Group on Electronic Devices, 1976, IECE, , ED-75-72.
    2. 2)
      • L.S. Bowman , C.A. Burrus . Pulse-driven silicon p-n junction avalanche oscillators for the 0.9 to 20 mm band. IEEE Trans. , 411 - 418
    3. 3)
      • Yamazaki, H., Ino, M., Makimura, T.: `Boron ion implantation into Si (DDR IMPATT diodes)', Proceedings of 5th Symposium on Ion Implantation into Semiconducters, 1974, p. 73–76, Japan.
    4. 4)
      • S.M. Sze , J.C. Irvin . Resistivity, mobility, and impurity levels in GaAs, Ge, and Si at 300 K. Solid-Slate Electron. , 599 - 602
    5. 5)
      • B. Culshaw . Effect of carrier diffusion on operation of avalanche diodes. Electron. Lett. , 143 - 144
    6. 6)
      • T. Ishibashi , M. Ohmori . , 200 GHz, 50 mW CW oscillation with Si SDR IMPATT diodes.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19760115
Loading

Related content

content/journals/10.1049/el_19760115
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading