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In situ measurements of arsenic losses during annealing of the usual evaporated contacts of GaAs Gunn diodes

In situ measurements of arsenic losses during annealing of the usual evaporated contacts of GaAs Gunn diodes

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© The Institution of Electrical Engineers
Published

Measurements of the arsenic losses during alloying of the usual evaporated metal contact systems of GaAs Gunn diodes are given. The results were obtained by making in situ alloying processes in a mass spectrometer. Curves of As2 yields are given as functions of temperature and time.

Inspec keywords: annealing; electrical contacts; Gunn diodes

Other keywords: evaporated contacts; GaAs Gunn diodes; annealing; alloying processes; As2 yields; As losses

Subjects: Bulk effect devices

References

    1. 1)
      • C.R. Paola . Metallic contacts for gallium arsenide. Solid-State Electron. , 1189 - 1197
    2. 2)
      • G.Y. Robinson . Metallurgical and electrical properties of alloyed Ni/Au-Ge films on n-type GaAs. Solid-State Electron. , 331 - 342
    3. 3)
      • V.L. Rideout . A review of the theory and technology for ohmic contacts to group III–V compound semiconductors. Solid-State Electron. , 541 - 550
    4. 4)
      • H. Salow , E. Grobe . Sperrfreie Metallkontakte fur Gunn-elemente. Z. Angew. Phys. , 137 - 141
    5. 5)
      • T. Sebestyen , H. Hartnagel , L.H. Herron . New method for producing ideal metal-semiconductor ohmic contacts. Electron. Lett. , 372 - 373
    6. 6)
      • Sebestyen, T., Hartnagel, H., Herron, L.: `New design criteria of Gunn diode contacts', IoP Conf. Ser. 24, 5th international symposium on galium arsenide and related compounds, 1974, Deauville, p. 77–88, 1975.
    7. 7)
      • K. Heime , U. König , E. Kohn , A. Wortmann . Very low resistance Ni-AuGe-Ni contacts to n-GaAs. Solid-State Electron. , 835 - 837
    8. 8)
      • J.R. Arthur . Surface stoichiometry and structure of GaAs. Surface-Sc. , 449 - 461
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