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In situ measurements of arsenic losses during annealing of the usual evaporated contacts of GaAs Gunn diodes

In situ measurements of arsenic losses during annealing of the usual evaporated contacts of GaAs Gunn diodes

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Measurements of the arsenic losses during alloying of the usual evaporated metal contact systems of GaAs Gunn diodes are given. The results were obtained by making in situ alloying processes in a mass spectrometer. Curves of As2 yields are given as functions of temperature and time.

References

    1. 1)
      • V.L. Rideout . A review of the theory and technology for ohmic contacts to group III–V compound semiconductors. Solid-State Electron. , 541 - 550
    2. 2)
      • Sebestyen, T., Hartnagel, H., Herron, L.: `New design criteria of Gunn diode contacts', IoP Conf. Ser. 24, 5th international symposium on galium arsenide and related compounds, 1974, Deauville, p. 77–88, 1975.
    3. 3)
      • G.Y. Robinson . Metallurgical and electrical properties of alloyed Ni/Au-Ge films on n-type GaAs. Solid-State Electron. , 331 - 342
    4. 4)
      • C.R. Paola . Metallic contacts for gallium arsenide. Solid-State Electron. , 1189 - 1197
    5. 5)
      • H. Salow , E. Grobe . Sperrfreie Metallkontakte fur Gunn-elemente. Z. Angew. Phys. , 137 - 141
    6. 6)
      • K. Heime , U. König , E. Kohn , A. Wortmann . Very low resistance Ni-AuGe-Ni contacts to n-GaAs. Solid-State Electron. , 835 - 837
    7. 7)
      • J.R. Arthur . Surface stoichiometry and structure of GaAs. Surface-Sc. , 449 - 461
    8. 8)
      • T. Sebestyen , H. Hartnagel , L.H. Herron . New method for producing ideal metal-semiconductor ohmic contacts. Electron. Lett. , 372 - 373
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