X-band performance of GaAs power f.e.t.s

X-band performance of GaAs power f.e.t.s

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The results of X-band measurements on GaAs power f.e.t.s are reported. These devices are fabricated with a simple planar process. Devices with output powers of 1 W or more at 9 GHz with 4 dB gain have been fabricated from more than a dozen slices. The highest output powers observed with 4 dB gain are 1.78 W at 9 GHz and 2.5 W at 8 GHz. Devices have been operated with 46% power-added efficiency at 8 GHz.


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      • Fukata, M., Ishikawa, H., Suyama, K., Maeda, M.: `GaAs 8 GHz-band high power FET', International Electron Devices Meeting Technical Digest, 1974, p. 285–287.
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      • D.L. Rode , B. Schwartz , J.V. Dilorenzo . Electrolytic etching and electron mobility of GaAs for FETs. Solid-State Electron. , 1119 - 1123

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