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X-band performance of GaAs power f.e.t.s

X-band performance of GaAs power f.e.t.s

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The results of X-band measurements on GaAs power f.e.t.s are reported. These devices are fabricated with a simple planar process. Devices with output powers of 1 W or more at 9 GHz with 4 dB gain have been fabricated from more than a dozen slices. The highest output powers observed with 4 dB gain are 1.78 W at 9 GHz and 2.5 W at 8 GHz. Devices have been operated with 46% power-added efficiency at 8 GHz.

References

    1. 1)
      • H.C. Huang , I. Drukier , R.L. Camisa , S.Y. Narayan , S.T. Jolly . High efficiency GaAs m.e.s.f.e.t. amplifiers. Electron. Lett. , 508 - 509
    2. 2)
      • Fukata, M., Ishikawa, H., Suyama, K., Maeda, M.: `GaAs 8 GHz-band high power FET', International Electron Devices Meeting Technical Digest, 1974, p. 285–287.
    3. 3)
      • Macksey, H.M., Adams, R.L.: `Fabrication processes for GaAs power FET's', Proceedings of the Fifth Biennial Conference on Active Semiconductor Devices for Microwaves and Integrated Optics, 1975, Ithaca, Cornell University.
    4. 4)
      • D.L. Rode , B. Schwartz , J.V. Dilorenzo . Electrolytic etching and electron mobility of GaAs for FETs. Solid-State Electron. , 1119 - 1123
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