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Effect of heat treatment on the nature of traps in epitaxial GaAs

Effect of heat treatment on the nature of traps in epitaxial GaAs

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By annealing v.p.e. GaAs at increasing temperatures, the commonly observed 0.83 eV electron trap in v.p.e. and bulk GaAs is removed and a 0.64 eV hole trap, also detected in l.p.e. GaAs, is introduced. The results indicate that these electron and hole traps are related to Ga and As vacancies, respectively.

References

    1. 1)
      • F. Hasegawa , A. Majerfeld . Majority-carrier traps in n-and p-type epitaxial GaAs. Electron. Lett. , 286 - 288
    2. 2)
      • A. Mircea , A. Mitonneau . A study of electron traps in vapour-phase epitaxial GaAs. Appl. Phys. , 15 - 21
    3. 3)
      • S.Y. Chiang , G.L. Pearson . Properties of vacancy defects in GaAs single crystals. J. Appl. Phys. , 2986 - 2991
    4. 4)
      • D.V. Lang . Deep level transient spectroscopy: a new method to characterize trapsin semiconductors. J. Appl. Phys. , 3023 - 3032
    5. 5)
      • Hasegawa, F., Majerfeld, A.,: To be published.
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