Effect of heat treatment on the nature of traps in epitaxial GaAs

Effect of heat treatment on the nature of traps in epitaxial GaAs

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

By annealing v.p.e. GaAs at increasing temperatures, the commonly observed 0.83 eV electron trap in v.p.e. and bulk GaAs is removed and a 0.64 eV hole trap, also detected in l.p.e. GaAs, is introduced. The results indicate that these electron and hole traps are related to Ga and As vacancies, respectively.


    1. 1)
      • F. Hasegawa , A. Majerfeld . Majority-carrier traps in n-and p-type epitaxial GaAs. Electron. Lett. , 286 - 288
    2. 2)
      • A. Mircea , A. Mitonneau . A study of electron traps in vapour-phase epitaxial GaAs. Appl. Phys. , 15 - 21
    3. 3)
      • S.Y. Chiang , G.L. Pearson . Properties of vacancy defects in GaAs single crystals. J. Appl. Phys. , 2986 - 2991
    4. 4)
      • D.V. Lang . Deep level transient spectroscopy: a new method to characterize trapsin semiconductors. J. Appl. Phys. , 3023 - 3032
    5. 5)
      • Hasegawa, F., Majerfeld, A.,: To be published.

Related content

This is a required field
Please enter a valid email address