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Wide-bandwidth high-radiance gallium-arsenide light-emitting diodes for fibre-optic communication

Wide-bandwidth high-radiance gallium-arsenide light-emitting diodes for fibre-optic communication

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High-radiance GaAs l.e.d.s with 3 dB modulation bandwidths exceeding 500 MHz have been fabricated from p-n junction layers prepared with very high zinc acceptor doping levels. This development will permit the use of l.e.d.s in near-gigahertz or gigabit/s optical-fibre communication links.

References

    1. 1)
      • Proceedings of the 1st European conference on optical fibre communications, IEE Conf. Publ. 132, 1975.
    2. 2)
      • S.E. Miller , E.A.J. Marcatili , T. Li . Research toward optical-fibre transmission systems. Pt. 11—Devices and systems considerations. Proc. Inst. Elec. Electron. Eng. , 1726 - 1751
    3. 3)
      • G. Lesher , F. Stern . Spontaneous and stimulated recombination in semiconductors. Phys. Rev. , A553 - 563
    4. 4)
      • A.W. Mabbitt , R.C. Goodfellow . High-radiance small-area gallium-indium-arsenide 1.06 μm light-emitting diodes. Electron. Lett. , 274 - 275
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