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Transistor transit-time oscillator (translator)

Transistor transit-time oscillator (translator)

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Operation of a novel junction-transistor structure as a microwave negative-resistance diode is described. Negative-resistances of −25 Ω at 10 GHz are predicted, corresponding to negative Q-factors of −5. Large-signal c.w. power outputs of the order of 1 W from individual devices are indicated. It is expected that device operation in the frequency range 1–100 GHz should be possible at voltage bias levels from 5 to 50 V.

References

    1. 1)
      • G. Weinreich . Transit-time transistor. J. Appl. Phys. , 1025 - 1027
    2. 2)
      • J.F. Gibbons . An analysis of the modes of operation or a simple transistor oscillator. Proc. Inst. Radio Eng. , 1383 - 1390
    3. 3)
      • H.J. Roberts , F.J. Hyde . Transistor operation in the transit-time region. J. Elec. Control , 201 - 217
    4. 4)
      • G.T. Wright . Efficiency of the transistor transit-time oscillator. Electron. Lett. , 217 - 218
    5. 5)
      • G.T. Wright . 2-port impedance parameter of the junction transistor. Electron. Lett. , 375 - 376
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