Performance of sulphur-ion-implanted GaAs f.e.t.s

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Performance of sulphur-ion-implanted GaAs f.e.t.s

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© The Institution of Electrical Engineers
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GaAs f.e.t.s have been produced by sulphur-ion implantation that give optimum noise figures as low as 4.6 dB at 10 GHz and maximum available gains of greater than 10 dB at 10 GHz. A considerable degree of uniformity among the devices is observed.

Inspec keywords: ion implantation; field effect transistors; solid-state microwave devices; semiconductor device manufacture

Other keywords: 10 GHz; S ion implanted GaAs FETs; optimum noise figures

Subjects: Semiconductor doping; Semiconductor industry; Other field effect devices

References

    1. 1)
      • S.P. Emmons , D.D. Buss . J. Appl. Phys.. J. Appl. Phys.
    2. 2)
      • R.G. Hunsperger , N. Hirsch . GaAs field-effect transistors with ion-implanted channels. Electron. Lett. , 577 - 578
    3. 3)
      • Luxton, H.E.G.: `Excess noise in gallium arsenide field effect transistors', Abstracts of papers of European solid state device research conference, 1973, p. 206.
    4. 4)
      • R.G. Hunsperger , N. Hirsch . Solid-State Electron.. Solid-State Electron.
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