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Schottky-barrier-gate Gunn-effect devices have been fabricated in n-type layers produced by sulphur-ion implantation into Cr-doped semi-insulating GaAs substrates. The device performance was examined and a satisfactory gate trigger sensitivity was obtained under d.c. bias conditions.
Inspec keywords: Gunn devices; III-V semiconductors; ion implantation; gallium arsenide; semiconductor device manufacture
Other keywords:
Subjects: Semiconductor technology; Semiconductor industry; Crystal growth; Semiconductor doping; Bulk effect devices