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GaAs planar Gunn digital devices by sulphur-ion implantation

GaAs planar Gunn digital devices by sulphur-ion implantation

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© The Institution of Electrical Engineers
Published

Schottky-barrier-gate Gunn-effect devices have been fabricated in n-type layers produced by sulphur-ion implantation into Cr-doped semi-insulating GaAs substrates. The device performance was examined and a satisfactory gate trigger sensitivity was obtained under d.c. bias conditions.

Inspec keywords: Gunn devices; III-V semiconductors; ion implantation; gallium arsenide; semiconductor device manufacture

Other keywords: S ion implantation; GaAs planar Gunn digital devices; gate trigger sensitivity

Subjects: Semiconductor technology; Semiconductor industry; Crystal growth; Semiconductor doping; Bulk effect devices

References

    1. 1)
      • Ryssel, H., Muller, H., Schmid, K., Ruge, I.: `Boron doping profiles and annealing behaviour of amorphous implanted silicon layers', Proceedings of third international conference on ion implantation in semiconductors and other materials, 1972, p. 11–14.
    2. 2)
      • K. Kurumada , T. Mizutani , M. Fujimoto . GaAs planar Gunn digital devices with subsidiary anode. Electron. Lett. , 161 - 163
    3. 3)
      • Mause, K., Salow, H., Schlachetzki, A.: `Circuit integration with gate-controlld Gunn devices', Sumposium on GaAs, 1972, p. 275–285.
    4. 4)
      • R.G. Hunsperger , N. Hirsch . Ion-implanted microwave field-effect transistors in GaAs. Solid-State Electron. , 349 - 353
    5. 5)
      • T. Sugeta , H. Yanai . Schottky-gate bulk effect digital devices. Proc. Inst. Elec. Electron. Eng. , 1629 - 1630
    6. 6)
      • H. Matino . Reproducible sulfur diffusion into GaAs. Solid-State Electron. , 35 - 39
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