GaAs planar Gunn digital devices by sulphur-ion implantation

GaAs planar Gunn digital devices by sulphur-ion implantation

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Schottky-barrier-gate Gunn-effect devices have been fabricated in n-type layers produced by sulphur-ion implantation into Cr-doped semi-insulating GaAs substrates. The device performance was examined and a satisfactory gate trigger sensitivity was obtained under d.c. bias conditions.


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