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Nonuniform threshold voltage instabilities in p-channel silicon-gate m.o.s. transistors

Nonuniform threshold voltage instabilities in p-channel silicon-gate m.o.s. transistors

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© The Institution of Electrical Engineers
Published

To account for the changes in the Cgs/Vgs and Ids/Vgs characteristics of silicon-gate m.o.s. transistors after a period of b.t stress, a theoretical model is proposed in which charge trapped at the Si–SiO2 interface is distributed nonuniformly along the length of the channel.

Inspec keywords: field effect transistors

Other keywords: theoretical model; Si-SiO2 interface; p-channel Si gate MOS transistors

Subjects: Other field effect devices

References

    1. 1)
      • C.T. Sah . Characteristics of metal-oxide-semiconductor transistors. IEEE Trans. , 324 - 345
    2. 2)
      • S.R. Hofstein . Stabilisation of MOS devices. Solid-State Electron. , 657 - 670
    3. 3)
      • P.D. Lunsmann . Equivalent circuit for conductance of an m.o.s.f.e.t.. Electron. Lett. , 100 - 101
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