GaAs m.e.s.f.e.t.s are used to directly modulate d.h. GaAlAs lasers with a 200 Mbit/s pseudorandom, return-to-zero bit stream. The detected light pulses have 100% modulation depth, no significant intersymbol interference, 40 mW of peak power and risetimes and falltimes of 240 ps for a halfpower width of 280 ps.
Inspec keywords: field effect transistors; III-V semiconductors; optical modulation; semiconductor lasers
Other keywords:
Subjects: Lasing action in semiconductors; Semiconductor lasers; Other field effect devices; Laser beam modulation, pulsing and switching; mode locking and tuning
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