Independent control of temperature coefficient and breakdown voltage in Zener diodes

Independent control of temperature coefficient and breakdown voltage in Zener diodes

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The temperature coefficient of the breakdown voltage of a Zener (voltage-reference) diode has become accepted as an implicit function of the breakdown voltage. The letter describes a simple technique whereby the temperature coefficient may be independently controlled by altering the doping profile. To illustrate the technique, design criteria for a silicon diode with a breakdown voltage of 20 V and a nominally zero temperature coefficient are derived.


    1. 1)
      • FRAME, R.M.: Private communication.
    2. 2)
      • S.M. Sze . (1981) , Physics of semiconductor devices.
    3. 3)
      • A.F. Ioffe . (1960) , Physics of semiconductors.
    4. 4)
      • C.A. Lee , R.A. Logan , R.L. Batdorf , J.J. Kleimack , W. Weigmann . Ionization rates of electrons and holes in silicon. Phys. Rev.
    5. 5)
      • British Patent Application 3207 1/75, .
    6. 6)
      • F.A. Padovani , R. Stratton . Field and thermionic field emission in Schottky barriers. Solid-State Electron. , 695 - 707

Related content

This is a required field
Please enter a valid email address