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Novel 3-terminal amorphous-semiconductor device

Novel 3-terminal amorphous-semiconductor device

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© The Institution of Electrical Engineers
Published

A 3-terminal device containing an amorphous chalcogenide semiconductor is described. It is shown that, with the application of relatively low voltage pulses of appropriate polarity to a control electrode, switching of the device can be initiated or prevented.

Inspec keywords: amorphous semiconductors; semiconductor switches

Other keywords: low voltage pulses; chalcogenide semiconductor; 3-terminal amorphous semiconductor device; switching

Subjects: Bulk effect devices

References

    1. 1)
      • A. Madan , J. Allison , M.J. Thompson . Switching behaviour of amorphous threshold devices in the gap configuration. J. Non .-Cryst. Solids
    2. 2)
      • Schuocker, D., Sahathy, W.: `Control of switching in semiconducting glass films by a third electrode', Proceedings of the 5th international conference on amorphous and liquid semiconductors, 1974, Garmisch, W. Germany, p. 669–674.
    3. 3)
      • K.E. Van Landingham . Circuit applications of ovonic switching devices. IEEE. Trans. , 178 - 187
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