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Fast photoluminescence modulation for optoelectronic applications

Fast photoluminescence modulation for optoelectronic applications

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The principle of photoluminescence (p.l.) intensity modulation is demonstrated with near-bandgap p.l. of n GaAs bulk material. The p.l. is modulated by a semitransparent schottky barrier. Preliminary experimental results show the feasibility of fast p.l. pulse modulation (at 1 Mbit/s) and the applicability of this principle to optical signal transmission.

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      • U. Langmann . Photoluminescence of n-GaAs at transparent Schottky contacts. Appl. Phys. , 219 - 221
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