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Comparison of boron and neon damage effects in boron ion-implanted resistors

Comparison of boron and neon damage effects in boron ion-implanted resistors

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Boron and neon damage implants were used in fabricating integrated-circuit resistors in silicon. Resistor properties were studied as functions of damaging ion species and dose. Sheet resistances in the 10000 Ω/□ range were obtained with low temperature and voltage sensitivities and good d.c. isolation.

References

    1. 1)
      • Nicholas, K.U., Ford, R.A.: `Implanted resistors with properties enhanced by damage', IEEE International Electron Devices Meeting Technical Digest, 1973, Washington DC, p. 51–53.
    2. 2)
      • Nicholas, K.H., Ford, R.A.: `New techniques for improving high value ion implanted resistors', Proceedings of the 2nd international conference on ion implantation in semiconductors, 1971, Springer-Verlag, p. 357–361.
    3. 3)
      • Blamires, N.G.: `The influence of ion bombardment damage on the annealing behavior of boron implanted silicon', European conference on ion implantation, 1970, Peter Peregrinus Ltd., London, p. 52–66, Reading.
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