Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Quasisaturation-region operation of n–p–n−–n power transistors

Quasisaturation-region operation of n–p–n−–n power transistors

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

A 2-dimensional mathematical model is utilised to predict the internal behaviour of a typical n–p–n−–n power transistor operating under steady-state conditions. Results of the analysis for the quasisaturation-region operation indicate the extension of the base region in the n− collector and the presence of appreciable minority charge carriers in the inactive base region under the base contact.

Inspec keywords: power transistors; minority carriers

Other keywords: n- collector; n-p-n--n power transistors; minority charge carriers; quasisaturation region operation; inactive base region; 2-dimensional mathematical model

Subjects: Bipolar transistors

References

    1. 1)
      • R.J. Whittier , D.A. Tremere . Current gain and cutoff frequency falloff at high currents. IEEE Trans. , 39 - 57
    2. 2)
      • W.J. Chudobiak . The saturation characteristics of n–p–v–n power transistors. IEEE Trans. , 843 - 852
    3. 3)
      • L.A. Hahn . The saturation characteristics of high voltage transistors. Proc. Inst. Elec. Electron. Eng. , 1384 - 1388
    4. 4)
      • S.P. Gaur , D.H. Navon . Two-dimensional carrier flow in a transistor structure under non-isothermal conditions. IEEE Trans.
    5. 5)
      • D.L. Bowler , F.A. Lindholm . High current regimes in transistor collector regions. IEEE Trans. , 257 - 263
    6. 6)
      • L.E. Clark . Characteristics of two-region saturation phenomena. IEEE Trans. , 113 - 116
    7. 7)
      • H.C. Degraaff . Collector models for bipolar transistors. Solid-State Electron. , 587 - 600
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19750343
Loading

Related content

content/journals/10.1049/el_19750343
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address