A 2-zone cathode comprising a thin n+ region under a high-resistance contact improves the efficiency on transferred-electron oscillators. InP devices have shown high efficiency over a temperature range of −50 to +150°C.
References
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Colliver, D.J., Gray, K.W., Jones, D., Rees, H.D., Gibbons, G., White, P.M.: `Cathode contact effects in InP transferred-electron oscillators', Paper 30, Proceedings of 4th international symposium on GaAs and related compounds, 1972, Boulder, USA, p. 286–294.
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