InP microwave oscillations with 2-zone cathodes

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InP microwave oscillations with 2-zone cathodes

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Published

A 2-zone cathode comprising a thin n+ region under a high-resistance contact improves the efficiency on transferred-electron oscillators. InP devices have shown high efficiency over a temperature range of −50 to +150°C.

Inspec keywords: transferred electron devices; solid-state microwave devices; solid-state microwave circuits; microwave oscillators

Other keywords: -50 to +150 degrees C; InP microwave oscillators; 2-zone cathodes; high efficiency transferred electron oscillator; n+ region

Subjects: Oscillators; Solid-state microwave circuits and devices; Bulk effect devices

References

    1. 1)
      • Colliver, D.J., Gray, K.W., Jones, D., Rees, H.D., Gibbons, G., White, P.M.: `Cathode contact effects in InP transferred-electron oscillators', Paper 30, Proceedings of 4th international symposium on GaAs and related compounds, 1972, Boulder, USA, p. 286–294.
    2. 2)
      • D. Jones , H.D. Rees . Transit modes of InP transferred-electron devices. Electron. Lett. , 13 - 14
    3. 3)
      • D.J. Colliver , L.D. Irving , J.E. Pattison , H.D. Rees . High-efficiency InP transferred-electron oscillators. Electron. Lett. , 221 - 222
    4. 4)
      • R.C. Clarke . A study of the molar fraction effect in the PCl3–In–H2 system. J. Crystal Growth , 166 - 168
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