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Effect of dual implants into GaAs

Effect of dual implants into GaAs

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© The Institution of Electrical Engineers
Published

Enhanced donor activities have been obtained after annealing at 700°C for selenium implants into GaAs by implanting an equal dose of gallium together with the selenium. Donor concentration depth profiles, measured for both single and dual implants of 1×1013/cm2 and 2×1014/cm2 indicated that the increase in activity was mainly due to an increase in peak donor concentration for the dual implants compared with those measured for single implants.

Inspec keywords: semiconductor doping; III-V semiconductors; gallium arsenide; ion implantation

Other keywords: GaAs; dual implants; donor concentration depth profiles; annealing; Se implants; donor activities

Subjects: Crystal growth; Semiconductor doping

References

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