Surface morphology of liquid-phase-epitaxial InP

Surface morphology of liquid-phase-epitaxial InP

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It is shown that misorientation of a substrate from a lowest index plane even by 0.1° results in epitaxial layers having lamellar surface structure and indium inclusions. Smooth layers can be grown from a supercooled melt on nominally oriented (±1°) (111) B planes. For (100) substrates, exact orientation (±0.1°) and melt supercooling are necessary to grow smooth layers.


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