http://iet.metastore.ingenta.com
1887

Dependence of t.e.o. efficiency on NL product

Dependence of t.e.o. efficiency on NL product

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

As the NL product is increased, an increase in efficiency of t.e.o. devices is observed. This effect is theoretically explained in terms of the induced current caused by the moving space charge in the active layer. A limit on current peak/valley ratio for various NL product devices is presented.

References

    1. 1)
      • H. Kroemer . Nonlinear space-charge dynamics in a semiconductor with a negative differential mobility. IEEE Trans.
    2. 2)
      • J.B. Gunn . Microwave oscillations of current in III–V semiconductors. Solid-State Commun. , 88 - 91
    3. 3)
      • J.A. Copeland . A new mode of operation for bulk negative resistance oscillators. Proc. Inst. Elec. Electron. Eng. , 1479 - 1480
    4. 4)
      • H.D. Rees , D. Jones . Accumulation transit mode in transferred-electron oscillators. Electron Lett. , 566 - 567
    5. 5)
      • Camp, W.O., Jun, , Woodard, D.W., Eastman, L.F.: `Biastuneable C.W. transferred-electron oscillators', Proceedings of Fourth Cornell Conference on microwave semiconductor devices, 1973, p. 177–183.
    6. 6)
      • Camp, W.O.: Private communication.
    7. 7)
      • S.I. Long , J.M. Ballantyne , L.F. Eastman . Steady-state LPE growth of GaAs. J. Cryst. Growth
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19750228
Loading

Related content

content/journals/10.1049/el_19750228
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address