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Alumina microstrip GaAs f.e.t. 11 GHz oscillator

Alumina microstrip GaAs f.e.t. 11 GHz oscillator

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© The Institution of Electrical Engineers
Published

A small, lightweight 11 GHz f.e.t. oscillator has been developed. An output power of 10 mW with an efficiency of 10% was easily produced using a GaAs f.e.t. designed for small-signal amplifier applications. Its low power consumption makes it a suitable low-noise source for integrated-receiver applications.

Inspec keywords: field effect transistors; solid-state microwave circuits; microwave oscillators

Other keywords: 11 GHz oscillator; GaAs FET; alumina microstrip; output power; low power consumption

Subjects: Other field effect devices; Solid-state microwave circuits and devices; Oscillators

References

    1. 1)
      • M. Maeda , S. Takahashi , H. Kodera . C.W. oscillation characteristics of GaAs Schottky-barrier gate field-effect transistors. Proc. Inst. Elec. Electron. Eng. , 320 - 321
    2. 2)
      • Slaymaker, N.A., Turner, J.A.: `Microwave FET amplifiers with centre frequencies between 1 and 11 GHz', Paper A.5.1, European Microwave Conference, 1973.
    3. 3)
      • Luxton, H.E.G.: `GaAs FETs—their performance and applications up to X-band frequencies', Paper B.2.2, European Microwave Conference, 1974.
    4. 4)
      • Pucel, R.A., Bera, R., Masse, D.: `An evaluation of GaAs FET oscillators and mixers for integrated front-end applications', Paper WPM 7.1, IEEE ISSCC, 1975.
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