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M.I.C. TRAPATT oscillator for efficient S band operation

M.I.C. TRAPATT oscillator for efficient S band operation

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The letter describes the construction and performance of a S band m.i.c. TRAPATT oscillator. The design utilises a system of sliding lumped-element sections to provide optimum performance from unencapsulated silicon p+–n–n+ chips. Efficiencies of greater than 30% at 2.6 GHz and peak output powers up to 40 W are reported. The oscillator is small and self contained and is suitable for ai borne transmitters.

References

    1. 1)
      • S.G. Liu . Microstrip high power high efficiency avalanche diode oscillator. IEEE Trans. , 1068 - 1071
    2. 2)
      • P.T. Ho , W.R. Curtice . A microstrip TRAPATT amplifier for X-band operation. Proc. Inst. Elec. Electron. Eng.
    3. 3)
      • W.E. Wilson . 1 kW microstripline TRAPATT oscillator. Electron. Lett. , 174 - 176
    4. 4)
      • W.J. Evans . Circuits for high efficiency avalanche diode oscillators. IEEE Trans.
    5. 5)
      • Welch, J.D.: `Load impedance characteristics of TRAPATT oscillators', AD–776773, Technical Report 496, 1973.
    6. 6)
      • Corbey, C.D., Newton, B.H., Summers, J.G.: `Frequency stable MIC S-band and C-band TRAPATT oscillators', Proceedings of European Microwave Conference, 1973, Hamburg, (to be published).
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