http://iet.metastore.ingenta.com
1887

Majority-carrier traps in n- and p-type epitaxial GaAs

Majority-carrier traps in n- and p-type epitaxial GaAs

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Majority-carrier traps are characterised for n- and p-type GaAs. Bulk and vapour-phase-epitaxial n GaAs show the same electron-trap centre (0.83 eV). No electron traps were detected in liquid-phase epitaxial n GaAs, but three hole trap centres (0.64, 0.44 and ∼ 0.6 eV) were found in p GaAs. The capture cross-section and density of these centres have also been determined.

References

    1. 1)
      • R.R. Senechal , J. Basinski . Capacitance measurements on Au–GaAs Schottky barriers. J. Appl. Phys. , 4581 - 4589
    2. 2)
      • F. Hasegawa . Deep energy levels in the high resistance region at GaAs vapour epitaxial film substrate interface. Japan J. Appl. Phys. , 638 - 646
    3. 3)
      • G.H. Glover . Determination of deep levels in semiconductors from C–V measurements. IEEE Trans. , 138 - 143
    4. 4)
      • M. Bleicher , E. Lange . Schottky barrier capacitance measurements for deep level impurity determination. Solid-State Electron. , 375 - 380
    5. 5)
      • C.I. Huang , S.S. Li . Analyses of transient capacitance experiments for Au-GaAs Schottky barrier diodes in the presence of deep impurities and the interfacial layer. Solid-State Electron. , 1481 - 1486
    6. 6)
      • H Okamoto , S. Sakata , K. Sakai . Depth profile of concentration of deep level impurities in vapour-phase epitaxial gallium-arsenide grown under various arsenic vapour pressures. J. Appl. Phys. , 1316 - 1326
    7. 7)
      • Hicks, H.G., Greene, P.D.: `Control of silicon contamination in solution growth of gallium arsenide in silica', Proceedings of third internation symposium on GaAs and related compounds, 1972, Boulder, Colo., Institute of Physics and The Physical Society, , p. 92–99.
    8. 8)
      • D.V. Lang . Deep level transient spectroscopy: a new method to characterize trapsin semiconductors. J. Appl. Phys. , 3023 - 3032
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19750217
Loading

Related content

content/journals/10.1049/el_19750217
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address