High-radiance small-area gallium–indium-arsenide 1.06 μm light-emitting diodes

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High-radiance small-area gallium–indium-arsenide 1.06 μm light-emitting diodes

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© The Institution of Electrical Engineers
Published

The preparation and performance of 1.06 μm gallium–indium-arsenide high-radiance light-emitting diodes is described. Radiances of 15 W/steradian/cm2 at 100 mA drive were obtained. Direct modulation by means of the current drive up to 250 MHz is reported with 3 dB modulation bandwidth at 150 MHz. These sources will permit the development of wide-bandwidth fibre-optic communication systems, which can take advantage of the low fibre attenuation and material dispersion at 1.06 μm.

Inspec keywords: light emitting diodes; optical communication equipment

Other keywords: high radiance; direct modulation; fibre attenuation; 1.06 microns; GaInAs; light emitting diodes; material dispersion; fibre optical communication systems

Subjects: Light emitting diodes; Optical communication

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