Integrated GaAs f.e.t. mixer performance at X band

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Integrated GaAs f.e.t. mixer performance at X band

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© The Institution of Electrical Engineers
Published

Experiments were performed at X band with GaAs f.e.t.s used as mixer elements. These studies show that an f.e.t. mixer may exhibit a conversion gain approaching that of the corresponding amplifier. Conversion gains as high as 6 dB were measured. Low noise and high signal-handling capabilities were also demonstrated.

Inspec keywords: solid-state microwave circuits; field effect transistors; mixers (circuits); hybrid integrated circuits

Other keywords: conversion gain; amplifier; MIC; integrated FET's; X-band; mixer elements

Subjects: Hybrid integrated circuits; Solid-state microwave circuits and devices; Other field effect devices; Modulators, demodulators, discriminators and mixers

References

    1. 1)
      • J.E. Sitch , P.N. Robson . The performance of GaAs field effect transistors as microwave mixers. Proc. Inst. Elec. Electron. Eng. , 399 - 400
    2. 2)
      • H. Statz , H.A. Haus , R.A. Pucel . Noise characteristics of gallium arsenide field effect transistors. IEEE Trans. , 549 - 562
    3. 3)
      • Luxton, H.E.G.: `Excess noise in gallium arsenide field effect transistors', Abstracts of papers of European solid-state devices research conference, 1973, p. 206.
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