Popcorn noise and generation-recombination noise observed in ion-implanted silicon resistors

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Popcorn noise and generation-recombination noise observed in ion-implanted silicon resistors

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© The Institution of Electrical Engineers
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Experimental results show that, for low currents, the generation-recombination noise component increases with current, and, at higher currents, it decreases inversely with current. For currents greater than a certain value, a generation-recombination noise component is scarcely observed.

Inspec keywords: random noise; ion implantation; monolithic integrated circuits; resistors

Other keywords: ion implanted resistors; monolithic integrated circuits; generation recombination noise

Subjects: Semiconductor doping; Semiconductor integrated circuits; Resistors

References

    1. 1)
      • T. Koji . Noise characteristics in the low frequency range of ion-implanted-base transistor (NPN type). Trans. Inst. Electron. & Commun. Eng. Jap C , 1 , 29 - 30
    2. 2)
      • Koji, T.: `Noise characteristics in the low frequency range of ion-implanted-base transistor (NPN type)', Proceedings of 4th international conference on ion implantation, Plenum Press, (to be published).
    3. 3)
      • H.R. Bilger , J.L. Tandon , M.A. Nicolet . Excess noise measurements in ion-implanted silicon resistors. Solid-State Electron. , 599 - 605
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