GaAs IMPATT devices using p+–n and p–n junctions with hi–lo and lo–hi–lo structures were investigated. A maximum efficiency of 26.8% and a maximum peak power of 12.8 W with 25% efficiency have been observed in the X band. A median life of 107 h is predicted for a 237°C junction temperature.
Inspec keywords: IMPATT diodes; solid-state microwave devices
Other keywords:
Subjects: Solid-state microwave circuits and devices; Junction and barrier diodes
References
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19750137
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