High-speed 1 μm GaAs m.e.s.f.e.t.

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High-speed 1 μm GaAs m.e.s.f.e.t.

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© The Institution of Electrical Engineers
Published

By minimising parasitic series resistances, a GaAs m.e.s.f.e.t. with 1 μm gate length was fabricated, possessing the highest known r.f. power gain, measured up to 18 GHz, for GaAs m.e.s.f.e.t.s.

Inspec keywords: field effect transistors; solid-state microwave devices

Other keywords: microwave; parasitic series resistances; 1 micron gate length; 18 GHz; high speed GaAs MESFET; RF power gain

Subjects: Solid-state microwave circuits and devices; Other field effect devices

References

    1. 1)
      • W. Baechtold , K. Daetwyler , T. Forster , T.O. Mohr , W. Walter , P. Wolf . Si and GaAs 0.5 μm Schottky-barrier field-effect transistors. Electron. Lett. , 232 - 234
    2. 2)
      • L.S. Napoli , J.J. Hughes , W.F. Reichert , S. Jolly . GaAs FET for high power amplification at microwave frequencies. RCA Rev. , 608 - 615
    3. 3)
      • E. Kohn . Normally-off m.e.s.f.e.t. with fast switching behaviour. Electron. Lett.
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