Voltage-controlled negative resistance in conductance transistors with hook structure

Access Full Text

Voltage-controlled negative resistance in conductance transistors with hook structure

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Experimental results are presented wherein a conductance transistor with a hook structure (h.c.d.t.) has a voltage-controlled negative resistance. The I/V characteristic has practical merit, in that the current becomes nearly zero in the high-voltage region, so that it can be applied to various electronic switching circuits.

Inspec keywords: transistors; negative resistance

Other keywords: conductance transistors; hook structure; voltage controlled negative resistance; electronic switching circuits

Subjects: Bipolar transistors

References

    1. 1)
      • L.O. Hill , D.O. Pederson , R.S. Pepper . Synthesis of electronic bistable circuits. IEEE Trans. , 25 - 35
    2. 2)
      • S. Ostefjells . Negative resistance circuit using two complementary field effect transistors. Proc. Inst. Elec. Electron. Eng.
    3. 3)
      • T. Mimura . Voltage-controlled DNR in unijunction transistor structure. IEEE Trans. , 604 - 605
    4. 4)
      • Suzuki, T., Mizushima, Y.: `Plasma-coupled semiconductor devices', Proceedings of 3rd conference on solid state devices, 1972, Tokyo, p. 40–44.
    5. 5)
      • T. Sudo , H. Kodama , T. Suzuki , Y. Mizushima . Characteristics of conductance transistors. Trans. Inst. Elec. Commun. Eng. (Japan) , 70 - 77
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19750128
Loading

Related content

content/journals/10.1049/el_19750128
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading