Velocity/field characteristic of n-type indium phosphide at 110 and 330 K

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Velocity/field characteristic of n-type indium phosphide at 110 and 330 K

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© The Institution of Electrical Engineers
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The technique of microwave conductivity measurement was employed to investigate the velocity/field characteristic of epitaxially grown indium phosphide. Cooling the material from 330 to 110 K produced a 10% decrease in threshold field and a 70% increase in peak velocity. Measurements of variation of power absorption with epitaxial layer thickness are also reported.

Inspec keywords: electrical conductivity of solid semiconductors and insulators; indium compounds; high field effects; III-V semiconductors

Other keywords: velocity/field characteristic; threshold field; power absorption; microwave conductivity measurement; n-InP; epitaxial layer thickness; 110K

Subjects: High-field transport and nonlinear effects (semiconductors/insulators); Electrical conductivity of II-VI and III-V semiconductors; II-VI and III-V semiconductors

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