GaAs–GaxAl1−xAs 4-layer heterostructures can exhibit a negative resistance at low temperatures if the p-type layers are doped with Si and Ge, respectively. A region of high resistivity is formed because of freezeout of carriers on deep levels. The effect can be described by Lampert's model of double injection.
Inspec keywords: luminescence of inorganic solids; light emitting diodes; III-V semiconductors; gallium arsenide; electroluminescence; negative resistance effects; p-n heterojunctions
Other keywords:
Subjects: Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Light emitting diodes; High-field transport and nonlinear effects (semiconductors/insulators); Electroluminescence (condensed matter); Semiconductor junctions
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