Electroluminescent GaAs–GaxAl1−xAs heterostructure diodes with negative resistance at low temperatures

Electroluminescent GaAs–GaxAl1−xAs heterostructure diodes with negative resistance at low temperatures

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GaAs–GaxAl1−xAs 4-layer heterostructures can exhibit a negative resistance at low temperatures if the p-type layers are doped with Si and Ge, respectively. A region of high resistivity is formed because of freezeout of carriers on deep levels. The effect can be described by Lampert's model of double injection.


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