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Electroluminescent GaAs–GaxAl1−xAs heterostructure diodes with negative resistance at low temperatures

Electroluminescent GaAs–GaxAl1−xAs heterostructure diodes with negative resistance at low temperatures

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GaAs–GaxAl1−xAs 4-layer heterostructures can exhibit a negative resistance at low temperatures if the p-type layers are doped with Si and Ge, respectively. A region of high resistivity is formed because of freezeout of carriers on deep levels. The effect can be described by Lampert's model of double injection.

References

    1. 1)
      • W.W. Tyler . Injection breakdown in iron-doped germanium diodes. Phys. Rev. , 226 - 227
    2. 2)
      • Alferov, ZH.I., Korol'Kov, V.I., Nikitin, V.G., Tret' Yakov, D.N., Yakovenko, A.A.: `-diodes based on heterojunctions in the GaAs–AlAs system', Proceedings of international conference on phys. chem. semiconductor heterojunction layer structures, 1970, Budapest, 2, p. 183–194.
    3. 3)
      • H. Kressel , S.U. Dunse , H. Nelson , F.Z. Hawrylo . Luninescence in silicon-doped GaAs grown by liquid-phase epitaxy. J. Appl. Phys. , 2006 - 2011
    4. 4)
      • H. Kressel , F.Z. Hawrylo , P. Lefur . Luninescence due to Ge acceptors in GaAs. J. Appl. Phys. , 4059 - 4066
    5. 5)
      • M.A. Lampert , P. Mark . (1970) , Current injection in solids.
    6. 6)
      • ZH.I. Alferov , V.M. Andreev , E.L. Portnoi , M.K. Trukan . AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold. Sov. Phys.-Semicond. , 1107 - 1110
    7. 7)
      • E. Schibli . Deep level effects on the small signal capacitance of p–n junctions. Solid-State Electron. , 392 - 394
    8. 8)
      • J. Vasi , C.R. Westgate . Recombination oscillations in double-injection devices. Solid-State Electron. , 513 - 515
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