Silicon IMPATT cascaded amplifier: 6 W (c.w.) at 9.6 GHz

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Silicon IMPATT cascaded amplifier: 6 W (c.w.) at 9.6 GHz

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© The Institution of Electrical Engineers
Published

A compact silicon IMPATT 4-stage coaxial amplifier has given 6.3 W (c.w.) with a power gain of 28 dB and an instantaneous bandwidth (−1 dB) of 200 MHz centred at 9.6 GHz. A gain ripple of less than 0.2 dB and phase deviation from linearity of ±3° across a 30 MHz bandwidth slot was obtained at the full rated output power. The overall efficiency was 4.5%. Commercial devices and circulators were used throughout the unit and the power in the final stage was obtained by combining the available powers from four separate devices. Particular attention was paid to the circuits to reduce the onset of spurious oscillations under large-signal conditions.

Inspec keywords: coupled circuits; solid-state microwave circuits; microwave amplifiers; IMPATT diodes

Other keywords: Si IMPATT; microwave amplifier; circulators; oscillations; efficiency; output power; bandwidth; cascaded amplifier; large signal conditions; phase deviation; gain ripple

Subjects: Junction and barrier diodes; Solid-state microwave circuits and devices; Amplifiers

References

    1. 1)
      • C.T. Rucker . A multiple-diode high-average-power avalanche-diode oscillator. IEEE Trans. , 1156 - 1158
    2. 2)
      • P.W. Braddock , N.C. Owen , R. Genner . High-power avalanche IMPATT reflection amplifier using the Rucker combining circuit. Electron. Lett. , 562 - 564
    3. 3)
      • K. Kurokowa . An analysis of Rucker's multidevice symmetrical oscillator. IEEE Trans. , 967 - 969
    4. 4)
      • M.E. Hines . Large-signal noise, frequency conversion and parametric instabilities in IMPATT diode networks. Proc. Inst. Elec. Electron. Eng. , 1534 - 1548
    5. 5)
      • Lee, C.W., Tsai, W.C.: `High power GaAs avalanche diode amplifiers', IEEE International Convention Digest, 1971, p. 368–369.
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