Electrochemical technique for the continuous automatic plotting of semiconductor donor concentration over large depths

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Electrochemical technique for the continuous automatic plotting of semiconductor donor concentration over large depths

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© The Institution of Electrical Engineers
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Continuous donor-concentration profiles in GaAs epitaxial layers have been obtained by an automated electrochemical technique. In contrast with other techniques, high doping levels and large thicknesses are easily accommodated, enabling profiles to be measured throughout an epitaxial layer, and to include heavily doped buffer layers, and substrates, to any required depth.

Inspec keywords: materials testing; gallium arsenide; semiconductor doping; III-V semiconductors

Other keywords: semiconductor profile measurement; electrochemical technique; materials testing; semiconductor doping; continuous automatic plotting; gallium arsenide; semiconductor donor concentration; III IV semiconductors

Subjects: Semiconductor doping; Crystal growth

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