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C.W. operation of ion-implanted GaAs read-type IMPATT diodes

C.W. operation of ion-implanted GaAs read-type IMPATT diodes

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© The Institution of Electrical Engineers
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Epitaxial and ion-implantation techniques have been combined to form a high/low doping profile for GaAs Schottky-barrier Read-type IMPATT diodes. A c.w. output power of 1.1 W with 25% conversion efficiency was obtained at 11 GHz.

Inspec keywords: IMPATT diodes; solid-state microwave devices; microwave oscillators

Other keywords: Read type diode; GaAs; solid state microwave devices; IMPATT diodes; microwave oscillators; 11 GHz

Subjects: Junction and barrier diodes; Solid-state microwave circuits and devices; Oscillators

References

    1. 1)
      • H.C. Huang . A modified GaAs IMPATT structure for high efficiency operation. IEEE Trans. , 482 - 486
    2. 2)
      • R.G. Hunsperger , N. Hirsch . GaAs field-effect transistors with ion-implanted channels. Electron. Lett. , 577 - 578
    3. 3)
      • G. Salmer , J. Pribetich , A. Farrayre , B. Kramer . Theoretical and experimental study of GaAs IMPATT oscillator efficiency. J. Appl. Phys. , 314 - 324
    4. 4)
      • S. Su , S. Sze . Design considerations of high-efficiency GaAs IMPATT diodes. IEEE Trans. , 541 - 543
    5. 5)
      • C. Kim , R. Steele , R. Bierig . High-power high-efficiency operation of Read-type IMPATT-diode oscillators. Electron. Lett. , 173 - 174
    6. 6)
      • M. Nakamura , H. Kodera , M. Migitaka . Computer study on GaAs Schottky barrier IMPATT diodes. Solid-State Electron. , 663 - 667
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