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C.W. operation of ion-implanted GaAs read-type IMPATT diodes

C.W. operation of ion-implanted GaAs read-type IMPATT diodes

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Epitaxial and ion-implantation techniques have been combined to form a high/low doping profile for GaAs Schottky-barrier Read-type IMPATT diodes. A c.w. output power of 1.1 W with 25% conversion efficiency was obtained at 11 GHz.

References

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      • C. Kim , R. Steele , R. Bierig . High-power high-efficiency operation of Read-type IMPATT-diode oscillators. Electron. Lett. , 173 - 174
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      • R.G. Hunsperger , N. Hirsch . GaAs field-effect transistors with ion-implanted channels. Electron. Lett. , 577 - 578
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