Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Threshold-voltage sensitivity of ion-implanted m.o.s. transistors due to process variations

Threshold-voltage sensitivity of ion-implanted m.o.s. transistors due to process variations

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Adjustment of the threshold voltage VT by ion implantation yields a certain distribution of threshold voltages determined by different process parameters. A procedure is presented for minimising the threshold-voltage sensitivity of implanted m.o.s. transistors due to these parameters for a typical set of process parameters.

Inspec keywords: ion implantation; sensitivity; field effect transistors

Other keywords: ion implantation; threshold voltage sensitivity; MOS; FET

Subjects: Other field effect devices; Semiconductor doping

References

    1. 1)
      • L.-O. Bauer , M.R. Macpherson , A.T. Robinson , H.G. Dill . Properties of silicon implanted with boron ions through thermal silicon dioxide. Solid-State Electron. , 289 - 300
    2. 2)
      • Seidel, T.: `Distribution of boron implanted silicon', Proceedings of second international conference on ion implantation in semiconductors, 1971, Springer, p. 47–57.
    3. 3)
      • W. Schemmert , B. Hoefflinger . Optimisation of depletion-mode transistros for an m.o.s. p-channel technology. Electron. Lett. , 555 - 556
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19740115
Loading

Related content

content/journals/10.1049/el_19740115
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address