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Threshold-voltage sensitivity of ion-implanted m.o.s. transistors due to process variations

Threshold-voltage sensitivity of ion-implanted m.o.s. transistors due to process variations

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Adjustment of the threshold voltage VT by ion implantation yields a certain distribution of threshold voltages determined by different process parameters. A procedure is presented for minimising the threshold-voltage sensitivity of implanted m.o.s. transistors due to these parameters for a typical set of process parameters.

References

    1. 1)
      • L.-O. Bauer , M.R. Macpherson , A.T. Robinson , H.G. Dill . Properties of silicon implanted with boron ions through thermal silicon dioxide. Solid-State Electron. , 289 - 300
    2. 2)
      • W. Schemmert , B. Hoefflinger . Optimisation of depletion-mode transistros for an m.o.s. p-channel technology. Electron. Lett. , 555 - 556
    3. 3)
      • Seidel, T.: `Distribution of boron implanted silicon', Proceedings of second international conference on ion implantation in semiconductors, 1971, Springer, p. 47–57.
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