Numerical analysis of electric field inside mesa p+-n-n+ avalanche diodes

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Numerical analysis of electric field inside mesa p+-n-n+ avalanche diodes

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© The Institution of Electrical Engineers
Published

Preliminary results of a numerical 2-dimensional analysis of the electric field and the space-charge region in silicon mesa p+-n-n+ diodes designed for avalanche transit-time operation are reported. It is shown that, for certain values of the bevel angles at the p+-n junction and the n-n+ interface, the electric field below the semiconductor surface exceeds the maximum field in the bulk material.

Inspec keywords: electric fields; electronics applications of computers; avalanche diodes; transit time devices; space charge

Other keywords: computer aided analysis; numerical analysis; transit-time devices; avalanche diodes; Si; space charge; electric fields

Subjects: Electronic engineering computing; Junction and barrier diodes

References

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      • Costea, I.: `Analiza bidimensionala a cîmpului electric si a distributiei de potentiale într-O stuctura mesa ', Electronics Department of Polytechnical Institute of Bucharest Report, 12 1973.
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      • J. Cornu . Field distribution near the surface of bevelled p-n junctions in high voltage devices. IEEE Trans. , 347 - 352
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      • D. Dascalu , G.H. Brezeanu , N. Marin . Bulk breakdown in mesa IMPATT structures. Rev. Roum. Phys.
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