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Gunn effects in InxGa1−xSb (0 ≤ x ≤ 0.16)

Gunn effects in InxGa1−xSb (0 ≤ x ≤ 0.16)

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© The Institution of Electrical Engineers
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Gunn effects in InxGa1−xSb (0 ≤ x ≤ 0.16) have been observed. To observe the Gunn effect, a condition nL/nΓ ≤ 0.1 or, equivalently, ΔELΓ ≥ 6.4kT should be satisfied in the crystals. The threshold fields for the Gunn effect in the crystals were in the range of 0.6−1.0 kV/cm.

Inspec keywords: Gunn effect; III-V semiconductors; indium antimonide; band structure; negative resistance

Other keywords: negative resistance; Gunn effects; InxGa1-xSb; band structure; indium antimonide; threshold fields; III-V semiconductors

Subjects: II-VI and III-V semiconductors; Electrical conductivity of II-VI and III-V semiconductors; High-field transport and nonlinear effects (semiconductors/insulators)

References

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      • C. Hilsum , H.D. Rees . Three-level oscillator: a new form of transferred-electron device. Electron. Lett. , 277 - 278
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      • Hojo, A., Kuru, I.: `Liquid phase epitaxy of In', Proceedings of international conference on solid state devices, 1973, Tokyo, Japan, (to be published).
    3. 3)
      • McGroddy, J.C.: `Negative differential conductivity in semiconductors', MPa-1, Proceedings of international conference on semiconductors, 1970, Boston, USA, p. 31–40.
    4. 4)
      • A.G. Thompson , J.C. Wooley . Energy-gap variation in mixed III–V alloys. Can. J. Phys. , 255 - 261
    5. 5)
      • J.C. McGroddy , M.R. Lorentz , T.S. Plaskett . The Gunn effect and conduction band structure in InxGa1−xSb alloys. Solid-State Commun. , 901 - 903
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