Two types of implanted microwave transistor structures are outlined, and their behaviour is compared with a totally diffused device. Minimum noise figures for the implanted transistors have been obtained in the range 3.6–4.5 dB at a frequency of 4 GHz.
Inspec keywords: ion implantation; solid-state microwave devices; bipolar transistors; noise
Other keywords:
Subjects: Solid-state microwave circuits and devices; Semiconductor doping; Bipolar transistors
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19740030
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