%0 Electronic Article %A S. Ludvik %A P. Froess %K noise %K ion implantation %K 4 GHz %K solid state microwave devices %K bipolar transistors %X Two types of implanted microwave transistor structures are outlined, and their behaviour is compared with a totally diffused device. Minimum noise figures for the implanted transistors have been obtained in the range 3.6–4.5 dB at a frequency of 4 GHz. %@ 0013-5194 %T Comparison of noise parameters of diffused and ion-implanted microwave transistors %B Electronics Letters %D February 1974 %V 10 %N 4 %P 40-41 %I Institution of Engineering and Technology %U https://digital-library.theiet.org/;jsessionid=15njddvrx8o3m.x-iet-live-01content/journals/10.1049/el_19740030 %G EN