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Comparison of noise parameters of diffused and ion-implanted microwave transistors

Comparison of noise parameters of diffused and ion-implanted microwave transistors

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Two types of implanted microwave transistor structures are outlined, and their behaviour is compared with a totally diffused device. Minimum noise figures for the implanted transistors have been obtained in the range 3.6–4.5 dB at a frequency of 4 GHz.

References

    1. 1)
      • A.U. Macrae . Device fabrication by ion implantation. Radiat. Eff. , 59 - 73
    2. 2)
      • M.K. Barnoski , D.D. Loper . Microwave characteristics of ion-implanted bipolar transistors. Solid-State Electron , 441 - 451
    3. 3)
      • K.H. Nicholas . Studies of anomalous diffusion of impurities in silicon. Solid-State Electron , 35 - 47
    4. 4)
      • K.H. White , M.O. Thruston . Characterization of microwave transistors. Solid-State Electron , 523 - 542
    5. 5)
      • W.S. Johnson , J.F. Gibbons . (1969) , Projected range statistics.
    6. 6)
      • T.E. Seidel , I. Ruge , J. Graul . (1971) Distribution of boron implanted silicon, Ion-implantation in semiconductors.
    7. 7)
      • R.B. Fair . Profile estimation of high-concentration arsenic diffusions in silicon. J. Appl. Phys. , 1278 - 1280
    8. 8)
      • J.A. Archer . Design and performance of small-signal microwave transistors. Solid-State Electron. , 249 - 258
    9. 9)
      • H. Rothe , W. Dahlke . Theory of noisy fourpoles. Proc. Inst. Radio Eng. , 811 - 818
    10. 10)
      • S.D. Malaviya , A. van der Ziel . A simplified approach to noise in microwave transistors. Solid-State Electron. , 1511 - 1518
    11. 11)
      • H. Fukui . The noise performance of microwave transistors. IEEE Trans. , 329 - 341
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