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Bucket-brigade device with improved charge transfer

Bucket-brigade device with improved charge transfer

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The charge transfer of bucket-brigade devices can be considerably improved by the additional use of one transistor and one resistor per cell. The effect of this is demonstrated by a computer simulation.

References

    1. 1)
      • C.T. Sah . Characteristics of the metal-oxide-semiconductor transistors. IEEE Trans. , 324 - 345
    2. 2)
      • felubr, A.: `Computer analysis and simulation of m.o.s. circuits', Proceedings of international solid-state circuits conference, 1969, p. 134–135.
    3. 3)
      • C.N. Berglund . Analog performance limitations of charge-transfer dynamic shift registers. IEEE J. Solid-Slate Circuits , 391 - 394
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