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Pulsed silicon double-drift IMPATTs for microwave and millimetre-wave applications

Pulsed silicon double-drift IMPATTs for microwave and millimetre-wave applications

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© The Institution of Electrical Engineers
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The letter describes silicon double-drift IMPATT diodes designed for operation at microwave and millimetre-wave frequencies. These devices have delivered pulsed-power outputs of 16 W with 12.3% efficiency in the X band, 11 W with 14% efficiency in the KU band, and 6.4 W with 5.3% efficiency in the Ka band. These results, when combined with the demonstrated high reliability of silicon IMPATTS, should lead to the wide application of double-drift devices in pulsed-radar systems.

Inspec keywords: microwave oscillators; solid-state microwave devices; IMPATT diodes

Other keywords: Si; efficiency; IMPATT diodes; double drift; 6 to 11W; Ku-band; solid state microwave devices; X-band; microwave oscillators

Subjects: Junction and barrier diodes; Solid-state microwave circuits and devices; Oscillators

References

    1. 1)
      • R.S. Ying . X-band silicon double-drift IMPATT diodes using multiple epitaxy. Proc. Inst. Elec. Electron. Eng. , 1104 - 1105
    2. 2)
      • A. Lekholm , J. Mayr . Computer optimisation of double-drift-region IMPATT diodes. Electron. Lett. , 64 - 66
    3. 3)
      • D.L. Scharfetter , W.J. Evans , R.L. Johnston . Double-drift-region (p+ p− n–n+) avalanche diode oscillators. Proc. Inst. Elec. Electron. Eng. , 1131 - 1133
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