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Power-generation potential of various IMPATT structures from a scaling approximation

Power-generation potential of various IMPATT structures from a scaling approximation

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© The Institution of Electrical Engineers
Published

The power potential of the double-drift and both complementary 1-sided silicon IMPATTS is estimated as a function of frequency, using a scaling approximation that accounts for the dependence of generation efficiency on bias-current density. The results show the n+–p junction IMPATT to be a superior choice for reliable power generation below 25 GHz, owing to its relatively low threshold-current density.

Inspec keywords: IMPATT devices; solid-state microwave devices; current density; microwave generation

Other keywords: IMPATT devices; current density; microwave generation; scaling approximation; 25 GHz; Si

Subjects: Solid-state microwave circuits and devices; Other field effect devices

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