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Influence of heavy doping effects on the fT prediction of transistors

Influence of heavy doping effects on the fT prediction of transistors

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© The Institution of Electrical Engineers
Published

The gain–bandwidth product fT of a bipolar transistor is calculated, taking the heavy doping effect in the emitter into account. This effect reduces fT, owing to a larger charge storage in the emitter neutral region and a decrease of the built-in voltage of the emitter-base depletion capacitance.

Inspec keywords: semiconductor doping; bipolar transistors; carrier density

Other keywords: semiconductor doping; capacitance; bipolar transistors; grain bandwidth product; carrier density

Subjects: Bipolar transistors; Semiconductor doping

References

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      • A.A. Vol'Fson , V.K. Subashiev . Fundamental absorption edge of silicon heavily doped with donor or acceptor impurities. Sov. Phys.-Semicond. , 327 - 332
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      • D. Dale Kleppinger , F.A. Lindholm . Impurity concentration dependent density of states and resulting Fermi level for silicon. Solid-State Electron. , 407 - 416
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      • R.P. Mertens , H.J. Deman . Calculation of the emitter efficiency of bipolar transistors. IEEE Trans.
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      • H.J.J. de Man . The influence of heavy doping on the emitter efficiency of a bipolar transistor. IEEE Trans. , 833 - 835
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      • B.R. Chawla , H.K. Gummel . Transition region capacitance of diffused p–n junctions. IEEE Trans. , 178 - 199
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