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High-power high-efficiency operation of read-type IMPATT-diode oscillators

High-power high-efficiency operation of read-type IMPATT-diode oscillators

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© The Institution of Electrical Engineers
Published

C.W. operation of GaAs Schottky-barrier Read-type IMPATT-diode oscillators is reported. These devices exhibited efficiences from 20 to 24% with output powers of 2 ∼ 3 W c.w. in the Ku-band. The best efficiency was 24%, with an output power of 1.8 W c.w., while the maximum output power was 3.2 W c.w., with an efficiency of 20.7% at frequencies near 14 GHz.

Inspec keywords: Schottky-barrier diodes; gallium arsenide; solid-state microwave devices; IMPATT diodes; microwave oscillators

Other keywords: Ku-band; Schottky barrier diodes; Read type devices; solid state microwave circuits; 14 GHZ; CW operation; microwave oscillators; 3.2 W; GaAs; IMPATT diodes

Subjects: Solid-state microwave circuits and devices; Oscillators; Junction and barrier diodes

References

    1. 1)
      • Kramer, B.: `A 22% c.w. efficiency solid state microwave oscillator', IEEE GMTT international microwave symposium, 1972, Chicago.
    2. 2)
      • G. Salmer . Theoretical and experimental study of GaAs IMPATT oscillator efficiency. J. Appl. Phys. , 314 - 324
    3. 3)
      • Swartz, G.A.: `Performance of multilayer vapor-phase epitaxial complementary silicon millimeter wave IMPATT diodes', Proceedings of the IEEE international solid state circuits conference, 1973, p. 46, 47, 198.
    4. 4)
      • W.T. Read . A proposed high frequency, negative-resistance diode. Bell Syst. Tech. J. , 401 - 446
    5. 5)
      • Kim, C., Steele, R., Bierig, R.: `High power, high efficiency Read type GaAs Schottky-barrier IMPATT diode', Presented at 1973 workshop on compound semiconductors for microwave devices, 1973, New York.
    6. 6)
      • C. Kim , L.D. Armstrong . GaAs Schottky-barrier avalanche diodes. Solid-State Electron.
    7. 7)
      • H.C. Huang . High efficiency operation of GaAs Schottky-barrier IMPATTS. Proc. Inst. Elec. Electron. Eng.
    8. 8)
      • C. Kim , L.D. Armstrong . High power and high efficiency GaAs avalanche diodes. Appl. Phys. Lett.
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